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ALICE3-TRK: adjusted VD segmentation taking into account gaps between adjacent layers #14903

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Merged
njacazio merged 1 commit into from
Dec 9, 2025
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ALICE3-TRK: adjusted VD segmentation taking into account gaps between adjacent layers #14903

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3 changes: 2 additions & 1 deletion Detectors/Upgrades/ALICE3/TRK/base/include/TRKBase/Specs.h
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Original file line number Diff line number Diff line change
Expand Up @@ -49,8 +49,9 @@ namespace layer
constexpr double pitchX{10 * mu}; // pitch of the row
constexpr double pitchZ{10 * mu}; // pitch of the column
constexpr double totalThickness{silicon::thickness + metalstack::thickness}; // total thickness of the chip
constexpr std::array<double, nLayers> gaps{1.63 * mm, 1.2 * mm, 1.2 * mm}; // gaps between two consecutive petals
constexpr std::array<double, nLayers> radii{0.5 * cm, 1.2 * cm, 2.5 * cm}; // radius of layer in cm
constexpr std::array<double, nLayers> width{radii[0] * 2 * M_PI / 4, radii[1] * 2 * M_PI / 4, radii[2] * 2 * M_PI / 4}; // width of the quarter of layer in cm
constexpr std::array<double, nLayers> width{radii[0] * 2 * M_PI / 4 - gaps[0], radii[1] * 2 * M_PI / 4 - gaps[1], radii[2] * 2 * M_PI / 4 - gaps[2]}; // width of the quarter of layer in cm
constexpr double length{50 * cm}; // length of the layer
constexpr int nCols{static_cast<int>(length / pitchZ)}; // number of columns in the chip
constexpr std::array<int, nLayers> nRows{static_cast<int>(width[0] / pitchX), static_cast<int>(width[1] / pitchX), static_cast<int>(width[2] / pitchX)}; // number of rows in the chip. For the moment is different for each layer since a siner segmentation in repetitive units is stil to be implemented
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